GaP (Gallium Phosphide) is a orange-yellow semi-translucent material, which is made by direct reaction of galliium and phosphide or reaction by oxide gallium and phosphide at temperature of 900~1000C.

Specific gravity is 4.13,melt point is 1465C, dielectric constant is 9.1,energy range is 2.2eV. GaP has the semiconductor charecteristics as other III-V compounds materials therefore can be used for display elements of various visible light emmition diode as well as illumination (yellow and green) of mobile phone.

• We offer 2inch and 3inch GaP wafer.

【Application】

• Opto device : Visible LED such as display element(red,green) and backlight of LCD(yellow, green) etc.

【Growth】

• Liquid Encapsulated Czochralski (LEC)

Type/Dopant	N-type/S,Si,P-type/Zn Un-doped also available
Diameter	2inch ~ 3inch
Orientation	(100), (111), (110) Other special orientation or off angle also available.
Finishing	Single side mirror polished, Double sides mirror polished, as-cut
Thickness	250-1000um
Thickness	(1-10)E18cm-3
EPD	<1E5cm-2