GaSb
About GaSb
Gallium Antimondide (GaSb) is a single crystal grown by special LEC method,used in infrared detector,LED,laser,transistor and thermostat photovoltaic system etc.
As typified by GaSb, III-V group compound semicoductors are direct transition semiconductor,the bandgap of which is smaller than Si semiconductor, it can also tranfer the electromagnetic wave (length of 0.8um ~2.2um) in near-infrared area to electricity.
Technically,solar cell based on GaSb is very difficult however research on II-VI group epi by MBE to GaSb substrate is now under study.
As typified by GaSb, III-V group compound semicoductors are direct transition semiconductor,the bandgap of which is smaller than Si semiconductor, it can also tranfer the electromagnetic wave (length of 0.8um ~2.2um) in near-infrared area to electricity.
Technically,solar cell based on GaSb is very difficult however research on II-VI group epi by MBE to GaSb substrate is now under study.
E&M GaSb Wafer's feature
According to customer's required specification,we can meet your needs in a variety areas from small volume for R&D to mass production.
Besides,special orientation products like (111),(110) and (311) are also available.
Spec
| Growth | LEC |
| Type/Dopant | N-type/Te, P-type/Un-doped, Zn |
| Diameter | 2inch ~ 4inch |
| Orientation | (100)・(110)・(111)～(611) For other orientation and off-orientation,please ask us. |
| Finishing | Single side mirror polished, Double sides mirror polished, Epi-ready For other treatment,please ask us. |
| Thickness | 2inch: 500um, 3inch: 625um, 4inch：1000um For other thickness,please ask us. |
| Others | For career concentration, resistivity, mobility, it can be specified within the allowable range. |