Epi Wafer

About Epi Wafer

Epitaxial-growth means the crystal growth being conducted on crystal of substrate and disposed in accordance with foundation of substrate crystal phase.

Homoepitaxial means the growth of the same material as the substrate while heteroepitaxial means the growth of the different material from the substrate. Substrate wafer on which single crystal thin film deposited by epitaxial growth are generally called as epi wafer.

Silicon epi wafers are utilized for element of diode and transistor or substrate for IC such as bipolar type and MOS type.

Furthermore, multiple layer epi wafers and thick film epi wafers are often used for power device and contribute to smallness and energy-saving of various power-source products.


E&M Epi Wafer's feature

We offer high-quality and custom epitaxial wafers.


Standard specification of epitaxial layer
Thickness Resistivity
N-type epitaxial Wafer
Sb,As-doped substrate to 130μm 0.01-80ohm
P-type epitaxial Wafer
B-doped substrate to 130μm 0.01-80ohm
Special epitaxial and multi layer to 150μm to 150ohm