We offer the specification based on customer's requirement.
The following specifications are available.

• 【Device layer】
• Thickness : to thinnest 1.5um

• 【Buried Oxide】
• Buried oxide up to 4um thickness directly
• More than 4um of oxide film are also available
  ex) 5um (1um + 4um) Oxide film-Oxide film bonding

• 【Oxide film (more than 4um)】

Buried oxide can be formed by oxide film-oxide film(SiO₂+SiO₂) bonding (1um + 4um) but this strength is lower than that of silicon-oxide film(Si+SiO₂) bonding.

• 【Handle layer】
• If you would like handle layer which has less than 300um thickness, we can offer polishing.
• Ex) handle layer : 325um->150um*
• * For thickness,total thickness of SOI wafer shall be measured.
  We can process with target tolerance +/-2um.

• 【Backside polish for handle layer】
• We can offer backside polishing for handle layer.
• For thickness,total thickness of SOI wafer shall be measured.
• * Polishing device layer is also available at customer's request.

• 【Field oxide film process】
• We offer field oxide film process on surface of SOI wafer.
• Other films such as nitride film and metal film formation are also available.

• 【Bonding strength】
• We can offer SOI wafers which has lower bonding strength between device layer and buried oxide. 
• In normal bonding strength, we have past experience that there was no influence on bonding boundary face after etching process for 70 minutes by 48% HF. (based on our past testing data)

• 【Lower bonding strength】
• We can offer SOI wafers which has lower bonding strength.

• 【Standard spec of ICEMOS TECHNOLOGY, LTD.】
• Size: 4inch,5inch,6 inch,8inch
• http://www.icemostech.com/soi-wafers.html