InAs
About InAs
InAs (Indium Aesenide) of III-V group compound is a single crystal made by LEC method.
Wafer substrate is thinly sliced from single crystal ingot,then polished to epi-ready. InAs can be used in different wide areas such like measurement and analysis as infrared detector element by performing epitaxial layer to wafer substrate.
Wafer substrate is thinly sliced from single crystal ingot,then polished to epi-ready. InAs can be used in different wide areas such like measurement and analysis as infrared detector element by performing epitaxial layer to wafer substrate.
E&M InAs Wafer's feature
According to customer's required specification,we can meet your needs in a variety areas from small volume for R&D to mass production.
Besides,special orientation products like (111),(110) and (311) are also available.
Besides,special orientation products like (111),(110) and (311) are also available.
Spec
| Growth | LEC |
| Type/Dopant | N-type/S, Un-doped, P-type/Zn |
| Diameter | 2inch ~ 3inch |
| Orientation | (100)・(110)・(111)～(611) For other orientation and off-orientation,please ask us. |
| Finishing | Single side mirror polished, Double sides mirror polished, Epi-ready For other treatment,please ask us. |
| Thickness | 2inch: 500um, 3inch: 625um For other thickness,please ask us. |
| Others | For career concentration, resistivity, mobility, it can be specified within the allowable range. |