About InAs

InAs (Indium Aesenide) of III-V group compound is a single crystal made by LEC method.

Wafer substrate is thinly sliced from single crystal ingot,then polished to epi-ready. InAs can be used in different wide areas such like measurement and analysis as infrared detector element by performing epitaxial layer to wafer substrate.

E&M InAs Wafer's feature

According to customer's required specification,we can meet your needs in a variety areas from small volume for R&D to mass production.
Besides,special orientation products like (111),(110) and (311) are also available.


Growth LEC
Type/Dopant N-type/S, Un-doped, P-type/Zn
Diameter 2inch ~ 3inch
Orientation (100)・(110)・(111)~(611)
For other orientation and off-orientation,please ask us.
Finishing Single side mirror polished, Double sides mirror polished, Epi-ready
For other treatment,please ask us.
Thickness 2inch: 500um, 3inch: 625um
For other thickness,please ask us.
Others For career concentration, resistivity, mobility, it can be specified within the allowable range.